Theoretical study of the structural properties of the Si(0 0 1)-c(4 × 2) surface and the formation of its STM images

Surface Science

Volumn 566-568, Issue 1-3 PART 1, 2004, Pages 29-34

  Kamiński, Wojciech ^a   Jurczyszyn, Leszek ^a  

^a UNIVERSITY OF WROC AW   (Poland)

Author keywords

Density functional calculations; Green's function methods; Scanning tunneling microscopy; Scanning tunneling spectroscopies; Silicon; Surface relaxation and reconstruction

Indexed keywords

CHARGE TRANSFER; COMPUTATIONAL GEOMETRY; ELECTRONIC STRUCTURE; FERMI LEVEL; GREEN'S FUNCTION; MATHEMATICAL MODELS; PROBABILITY DENSITY FUNCTION; SCANNING TUNNELING MICROSCOPY;

ATOMIC GEOMETRY; DANGLING-BONDS; SCANNING TUNNELING SPECTROSCOPY (STS); SURFACE RELAXATION AND RECONSTRUCTION;

SILICON;

EID: 4544314529     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2004.05.018     Document Type: Conference Paper

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