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Volumn 64, Issue 23, 2001, Pages 2353101-2353106
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Fine electronic structure of the buckled dimers of Si(100) elucidated by atomically resolved scanning tunneling spectroscopy and bias-dependent imaging
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Author keywords
[No Author keywords available]
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Indexed keywords
DIMER;
SILICON;
ARTICLE;
ATOM;
ELECTRON;
ENERGY;
SCANNING TUNNELING MICROSCOPY;
SCANNING TUNNELING SPECTROSCOPY;
SURFACE CHARGE;
TEMPERATURE;
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EID: 0035893978
PISSN: 01631829
EISSN: None
Source Type: Journal
DOI: 10.1103/physrevb.64.235310 Document Type: Article |
Times cited : (43)
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References (27)
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