Phase manipulation between c(4 × 2) and p(2 × 2) on the Si(100) surface at 4.2 K

Physical Review Letters

Volumn 91, Issue 14, 2003, Pages

  Sagisaka, Keisuke ^a   Fujita, Daisuke ^a   Kido, Giyuu ^a  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; BUCKLING; DIMERS; LOW ENERGY ELECTRON DIFFRACTION; MOLECULAR DYNAMICS; PHASE TRANSITIONS; SCANNING TUNNELING MICROSCOPY; SURFACE STRUCTURE; ULTRAHIGH VACUUM; VOLTAGE CONTROL;

BIAS VOLTAGE; BUCKLING DIMERS; FLIP FLOP MOTION; PHASE MANIPULATION;

SEMICONDUCTING SILICON;

EID: 0242677516     PISSN: 00319007     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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