Semiconducting surface reconstructions of p-type Si(100) substrates at 5 K

Physical Review Letters

Volumn 92, Issue 21, 2004, Pages

  Perdigao L ^a   Deresmes, D ^a   Grandidier, B ^a   Dubois, M ^a   Delerue, C ^a   Allan, G ^a   Stievenard D ^a  

^a INSTITUT D ELECTRONIQUE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; COMPUTER SIMULATION; DIMERS; ELECTRONIC STRUCTURE; FERMI LEVEL; GREEN'S FUNCTION; GROUND STATE; HYDROGEN; INTEGRATION; PARAMETER ESTIMATION; PASSIVATION; RELAXATION PROCESSES; SCANNING TUNNELING MICROSCOPY; SILICON; SUBSTRATES; SURFACE PHENOMENA;

ATOMIC ORBITALS; KRAMER-BRILLOUIN APPROXIMATION; SCANNING PROBE MICROSCOPY; SURFACE RECONSTRUCTION;

SEMICONDUCTOR MATERIALS;

EID: 3142736671     PISSN: 00319007     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevLett.92.216101     Document Type: Article

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