Epitaxial lift-off process for GaAs solar cell on Si substrate

Solar Energy Materials and Solar Cells

Volumn 85, Issue 1, 2005, Pages 85-89

  Taguchi, Hironori ^a,b   Soga, Tetsuo ^b   Jimbo, Takashi ^b  

^a Lecip Corporation   (Japan)

^b NAGOYA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Bonding; Epitaxial lift off; GaAs on Si

Indexed keywords

BONDING; ELECTRIC POTENTIAL; NETWORKS (CIRCUITS); SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING SILICON; SUBSTRATES; THERMAL EXPANSION; THIN FILMS;

CONVERSION EFFICIENCY; EPITAXIAL LIFT-OFF PROCESSES; HIGH-EFFICIENCY SOLAR CELLS;

SOLAR CELLS;

EID: 9444255178     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2004.04.003     Document Type: Article

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