Observation of Si(110) surfaces by high-temperature scanning tunneling microscopy

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 39, Issue 7 B, 2000, Pages 4432-4434

  Yoshimura, Masamichi ^a   An, Toshu ^a   Ueda, Kazuyuki ^a  

^a TOYOTA TECHNOLOGICAL INSTITUTE   (Japan)

Author keywords

"16 2"; Facet; High temperature; Pentagon; Phase transition; Si(110); STM

Indexed keywords

CRYSTALLINE MATERIALS; HIGH TEMPERATURE EFFECTS; PHASE TRANSITIONS; SCANNING TUNNELING MICROSCOPY; SUPERCONDUCTING TRANSITION TEMPERATURE; SURFACE STRUCTURE;

ATOMISTIC BEHAVIOR;

SEMICONDUCTING SILICON;

EID: 0034224897     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.4432     Document Type: Article

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