Heteroepitaxial growth of GaAs on Si substrates using low energy Ga and As ion beams

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 141, Issue 1-4, 1998, Pages 562-565

  Yokota, K ^a   Tamura, S ^a   Miyashita, F ^a  

^a KANSAI UNIVERSITY   (Japan)

Author keywords

Gallium arsenide; Heteroepitaxial growth; Ion beams; Sticking coefficients

Indexed keywords

EPITAXIAL GROWTH; ION BEAMS; ION BOMBARDMENT; MOLECULAR BEAMS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; SILICON WAFERS; THIN FILMS;

STICKING COEFFICIENTS;

SEMICONDUCTING FILMS;

EID: 0032067820     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(98)00165-7     Document Type: Article

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