Effect of high temperature-pressure on GaAs layers grown on vicinal Si substrates

Crystal Research and Technology

Volumn 36, Issue 8-10, 2001, Pages 997-1003

  Bak Misiuk, J ^a   Dynowska, E ^a   Misiuk, A ^b   Calamiotou, M ^c   Kozanecki, A ^a   Domagala, J ^a   Kuristyn, D ^a   Glukhanyuk, W ^a   Georgakilas, A ^d   Trela, J ^a,b   Adamczewska, J ^a,b  

^a INSTITUTE OF PHYSICS   (Poland)

^b Department of Micro and Nanotechnology of Wide Bandgap Semiconductors   (Poland)

^c UNIVERSITY OF ATHENS   (Greece)

^d UNIVERSITY OF CRETE   (Greece)

Author keywords

High temperature high pressure; Semiconductors; Thin layer; X ray diffraction

Indexed keywords

BENDING (DEFORMATION); HETEROJUNCTIONS; HIGH TEMPERATURE EFFECTS; HYDROSTATIC PRESSURE; PRESSURE EFFECTS; STRAIN RATE; X RAY DIFFRACTION;

STRAIN RELAXATION;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0035161870     PISSN: 02321300     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-4079(200110)36:8/10<997::AID-CRAT997>3.0.CO;2-G     Document Type: Conference Paper

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