Influences of off-angle and off-direction of substrate on crystalline quality of GaAs and Ge heteroepitaxial films grown on vicinal Si(1 1 0) substrates by molecular-beam epitaxy

Journal of Crystal Growth

Volumn 209, Issue 4, 2000, Pages 724-733

  Yodo, Tokuo ^a   Toyama, Masaaki ^a   Imai, Yasuyuki ^a   Shirasawa, Hideki ^a  

^a OSAKA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPRESSIVE STRESS; CRYSTAL ATOMIC STRUCTURE; CRYSTAL ORIENTATION; INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING GERMANIUM; SEMICONDUCTOR GROWTH; SILICON WAFERS; STRAIN; SURFACE ROUGHNESS; TENSILE STRESS;

HETEROEPITAXIAL GROWTH;

SEMICONDUCTING FILMS;

EID: 0033908506     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(99)00396-6     Document Type: Article

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