Atomic defects generated by hydrogen on Si(110) surface as revealed by scanning tunneling microscopy

Materials Science and Engineering: B

Volumn 91-92, Issue , 2002, Pages 120-122

  Yoshimura, Masamichi ^a   Odawara, Mitsumasa ^a   Ueda, Kazuyuki ^a  

^a TOYOTA TECHNOLOGICAL INSTITUTE   (Japan)

Author keywords

Adsorption; Defect; Hydrogen; Pentagon; Si(110); STM

Indexed keywords

CHARGE TRANSFER; CRYSTAL DEFECTS; GAS ADSORPTION; HYDROGEN; SCANNING TUNNELING MICROSCOPY; SILICON WAFERS; STRESS ANALYSIS; SUBSTRATES; SURFACE STRUCTURE;

ATOMIC DEFECTS;

SEMICONDUCTING SILICON;

EID: 0037197468     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(01)00961-8     Document Type: Conference Paper

References (9)