Geometric component of charge pumping current in nMOSFETs due to low-temperature irradiation

IEEE Transactions on Nuclear Science

Volumn 49 I, Issue 6, 2002, Pages 2662-2666

  Witczak, Steven C ^a   King, Everett E ^b   Saks, Nelson S ^c   Lacoe, Ronald C ^b   Shaneyfelt, Marty R ^a   Hash, Gerald L ^a   Hjalmarson, Harold P ^a   Mayer, Donald C ^b  

^a SANDIA NATIONAL LABORATORIES   (United States)

^b AEROSPACE CORPORATION   (United States)

^c NAVAL RESEARCH LABORATORY   (United States)

Author keywords

Bulk recombination; Capture cross section; Charge pumping; Coulomb scattering; Geometric component; Hot electrons; Interface trap density; Irradiation; Low temperature; Mobility degradation; MOSFET; Oxide trapped charge; Trapping kinetics

Indexed keywords

CURRENT DENSITY; ELECTRIC CURRENTS; ELECTROMAGNETIC WAVE SCATTERING; ELECTRON MOBILITY; ELECTRON TRAPS; IRRADIATION; LOW TEMPERATURE EFFECTS; SEMICONDUCTING SILICON;

CHARGE PUMPING CURRENT;

MOSFET DEVICES;

EID: 0036947846     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2002.805987     Document Type: Conference Paper

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