SCOPUS 정보 검색 플랫폼

Surface and Interface Analysis

Volumn 34, Issue 1, 2002, Pages 481-484

Composition and growth of anodic and thermal oxides on InP and GaAs

(8) Pakes, A a Skeldon, P a Thompson, G E a Hussey, R J b Moisa, S b Sproule, G I b Landheer, D b Graham, M J b

a UNIVERSITY OF MANCHESTER (United Kingdom)

b NATIONAL RESEARCH COUNCIL CANADA (Canada)

Author keywords

AES; Anodic oxides; GaAs; InP; SIMS; Thermal oxides; XPS

Indexed keywords

COMPOSITION EFFECTS; CURRENT DENSITY; ELECTRIC PROPERTIES; ELECTRIC VARIABLES MEASUREMENT; ELECTROLYTES; ELECTRON TRAPS; GROWTH (MATERIALS); OXIDES; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE;

ANODIC FILMS; METAL INSULATOR SEMICONDUCTOR STRUCTURES; THERMAL OXIDES;

SURFACE STRUCTURE;

EID: 0036693083 PISSN: 01422421 EISSN: None Source Type: Journal
DOI: 10.1002/sia.1343 Document Type: Conference Paper

Times cited : (21)

References (14)

1
- 0003479975
- Plenum Press: New York
- (1985) Physics and Chemistry of III-V Compound Semiconductor Interfaces
- Wilmsen, C.W.¹

2
- 0016949992
- (1976) J. Electrochem. Soc. , vol.123 , pp. 713
- Hasegawa, H.¹ Hartnagel, H.L.²

3
- 0002812842
- (1994) Phys. Rev. , vol.B49 , pp. 11
- Hollinger, G.¹ Skheyte-Kabbani, R.² Gendry, M.³

4
- 84957225568
- (1985) J. Vac. Sci. Technol. , vol.A3 , pp. 2082
- Hollinger, G.¹ Bergignat, E.² Joseph, J.³ Robach, Y.⁴

5
- 0001660567
- (1987) J. Vac. Sci. Technol. , vol.B5 , pp. 1108
- Hollinger, G.¹ Joseph, J.² Robach, Y.³ Bergignat, E.⁴ Commere, B.⁵ Viktorovitch, P.⁶ Froment, M.⁷

6
- 0025519159
- (1990) Surf. Interface Anal. , vol.15 , pp. 641
- Faur, M.¹ Jayne, D.T.² Goradia, M.³

7
- 0004343946
- (in press)
- Corros. Sci.
- Pakes, A.¹ Skeldon, P.² Thompson, G.E.³ Moisa, S.⁴ Sproule, G.I.⁵ Graham, M.J.⁶

9
- 26744462700
- Proc. Oxide Films Symposium, 197th Meeting of the Electrochemical Society, Toronto, May 2000 , vol.2000-2004 , pp. 317
- Hussey, R.J.¹ Sproule, G.I.² McCaffrey, J.P.³ Driad, R.⁴ Poole, P.J.⁵ Landheer, D.⁶ SpringThorpe, A.J.⁷ Pakes, A.⁸ Echeverria, F.⁹ Skeldon, P.¹⁰ Thompson, G.E.¹¹

10
- 0010381117
- (1997) Proc. 27th State-of-the-Art Program on Compound Semiconductors, ECS Proc. , vol.21 , pp. 305
- Hussey, R.J.¹ Sproule, G.I.² Graham, M.J.³

11
- 0032818430
- (1999) Corros. Sci. , vol.41 , pp. 1467
- Schmuki, P.¹ Hussey, R.J.² Sproule, G.I.³ Tao, Y.⁴ Wasilewski, Z.R.⁵ McCaffrey, J.P.⁶ Graham, M.J.⁷

12
- 0345663029
- (1997) Proc. 26th State-of-the-Art Program in Compound Semiconductors, ECS Proc. , vol.1 , pp. 58
- Ashby, C.I.H.¹ Sullivan, J.P.² Newcomer, P.P.³ Missert, N.A.⁴ Hou, H.Q.⁵ Hammons, B.E.⁶ Baca, A.G.⁷

13
- 0010415034
- (1998) Appl. Phys. Lett. , vol.72 , pp. 2722
- Chou, L.J.¹ Hsieh, K.C.² Moy, A.³ Wohlert, D.E.⁴ Pickrell, G.⁵ Cheng, K.Y.⁶

14
- 0004005306
- John Wiley: New York
- (1981) Physics of Semiconductor Devices , pp. 403
- Sze, S.M.¹

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.