Channel length effect in a MOSFET structure by scanning capacitance microscopy

Surface Science

Volumn 544, Issue 1, 2003, Pages 87-92

  Kang, C J ^a   Jeon, D ^a   Kuk, Y ^b  

^a Myong Ji University   (South Korea)

^b Seoul National University   (South Korea)

Author keywords

Metal oxide semiconductor (MOS) structures; Silicon; Silicon oxides; Surface electronic phenomena (work function, surface potential, surface states, etc.)

Indexed keywords

CAPACITANCE; CARRIER CONCENTRATION; DIFFUSION IN SOLIDS; ELECTRON TRAPS; MICROSCOPIC EXAMINATION; SILICA; SILICON; SURFACE PHENOMENA;

CHANNEL LENGTH EFFECT; SCANNING CAPACITANCE MICROSCOPY;

MOSFET DEVICES;

EID: 0141754044     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2003.08.017     Document Type: Article

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