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Volumn 34, Issue 5-8, 2003, Pages 415-417

Tunable InAs quantum-dot lasers grown on (100) InP

Author keywords

Electroluminescence; Photoluminescence; Quantum dot lasers

Indexed keywords

CURRENT DENSITY; ELECTROLUMINESCENCE; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR GROWTH;

EID: 0038180613     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2692(03)00037-5     Document Type: Conference Paper
Times cited : (7)

References (8)
  • 4
    • 0001377309 scopus 로고    scopus 로고
    • Determination of single-pass optical gain and internal loss using a multisection device
    • Thomson J.D., Summers H.D., Hulyer P.J., Smowton P.M., Blood P. Determination of single-pass optical gain and internal loss using a multisection device. Appl. Phys. Lett. 75:(17):1999;2527-2529.
    • (1999) Appl. Phys. Lett. , vol.75 , Issue.17 , pp. 2527-2529
    • Thomson, J.D.1    Summers, H.D.2    Hulyer, P.J.3    Smowton, P.M.4    Blood, P.5
  • 6
    • 0000020557 scopus 로고    scopus 로고
    • Ground-state lasing at room temperature in long-wavelength InAs quantum-dot lasers on InP (311)B substrates
    • Saito H., Nishi K., Sugou S. Ground-state lasing at room temperature in long-wavelength InAs quantum-dot lasers on InP (311)B substrates. Appl. Phys. Lett. 78:(3):2001;267-269.
    • (2001) Appl. Phys. Lett. , vol.78 , Issue.3 , pp. 267-269
    • Saito, H.1    Nishi, K.2    Sugou, S.3
  • 7
    • 0001341498 scopus 로고    scopus 로고
    • Enhanced wavelengtth tuning of an InGaAsP-InP laser with a thermal-strain-magnifying trench
    • Cohen D.A., Mason B., Dolan J., Burns C., Coldren L.A. Enhanced wavelengtth tuning of an InGaAsP-InP laser with a thermal-strain-magnifying trench. Appl. Phys. Lett. 77:(17):2000;2629-2631.
    • (2000) Appl. Phys. Lett. , vol.77 , Issue.17 , pp. 2629-2631
    • Cohen, D.A.1    Mason, B.2    Dolan, J.3    Burns, C.4    Coldren, L.A.5
  • 8
    • 0035356466 scopus 로고    scopus 로고
    • Band parameters for III-V compound semiconductors and their alloys
    • Vurgaftman I., Meyer J.R. Band parameters for III-V compound semiconductors and their alloys. J. Appl. Phys. 89:(11):2001;5815-5875.
    • (2001) J. Appl. Phys. , vol.89 , Issue.11 , pp. 5815-5875
    • Vurgaftman, I.1    Meyer, J.R.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.