In situ mass spectrometry in a 10 torr W chemical vapor deposition process for film thickness metrology and real-time advanced process control

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 22, Issue 3, 2004, Pages 880-887

  Cho, Soon ^a   Henn Lecordier, Laurent ^a   Liu, Yijun ^a   Rubloff, Gary W ^a  

^a UNIVERSITY OF MARYLAND   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; FLUORESCENCE; INTERFEROMETERS; LITHOGRAPHY; MAINTENANCE; MASS SPECTROMETRY; PROCESS CONTROL; SENSORS; SILICON WAFERS;

ADVANCED PROCESS CONTROL (APC); GATE DIELECTRIC; REAL TIME CONTROL; RESIDUAL GAS ANALYSIS (RGA);

THIN FILMS;

EID: 3242732310     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1695332     Document Type: Article

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