Dynamic rate and thickness metrology during poly-Si rapid thermal chemical vapor deposition from SiH4 using real time in situ mass spectrometry

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 14, Issue 2, 1996, Pages 267-270

  Tedder, L L ^a   Rubloff, G W ^a   Cohaghan, B F ^b   Parsons, G N ^c  

^a NORTH CAROLINA STATE UNIVERSITY   (United States)

^b Cornell University   (United States)

^c North Carolina State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; MONITORING; PROCESS CONTROL; SEMICONDUCTING SILICON; SENSORS; SILICA; SILICON COMPOUNDS; SPECTRUM ANALYSIS; THERMAL EFFECTS; THICKNESS MEASUREMENT;

POLYSILICON; PRODUCT GENERATION; RAPID THERMAL CHEMICAL VAPOR DEPOSITION; REACTANT DEPLETION; REACTANT INPUT;

MASS SPECTROMETRY;

EID: 0030107338     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.579887     Document Type: Article

References (18)

1. The National Technology Roadmap for Semiconductors, section on Materials and Bulk Processes, Semiconductor Industry Association, 1994; Metrology Roadmap: A Supplement to the National Technology Roadmap for Semiconductors, section on Sensors and Methodology for In-Situ Process Control, SEMATECH Technology Transfer No. 94102578A-TR.
2. The National Technology Roadmap for Semiconductors, section on Materials and Bulk Processes, Semiconductor Industry Association, 1994; Metrology Roadmap: A Supplement to the National Technology Roadmap for Semiconductors, section on Sensors and Methodology for In-Situ Process Control, SEMATECH Technology Transfer No. 94102578A-TR.
3. A sample of recently published research of wafer temperature measurement and temperature uniformity during rapid thermal processing includes: F. Y. Sorrell, S. Yu, and W. J. Kiether, IEEE Trans. Semicond. Manuf 7, 454 (1994): Y. J. Lee, B. T. Khuriyakub, and K. C. Saraswat, Rev. Sci. Instrum. 65, 974 (1994); F. Y. Sorrell, M. J. Fordham, M. O. Ozturk, and J. J. Wortman, IEEE Trans. Electron. Devices. 39, 75 (1992); P. P. Apte and K. C. Saraswat, IEEE Trans. Semicond. Manuf. 5, 180 (1992); R. S. Gyurcsik, T. J. Riley, and F. Y. Sorrell, IEEE Trans. Semicond. Manuf. 4, 9 (1991).
4. A sample of recently published research of wafer temperature measurement and temperature uniformity during rapid thermal processing includes: F. Y. Sorrell, S. Yu, and W. J. Kiether, IEEE Trans. Semicond. Manuf 7, 454 (1994): Y. J. Lee, B. T. Khuriyakub, and K. C. Saraswat, Rev. Sci. Instrum. 65, 974 (1994); F. Y. Sorrell, M. J. Fordham, M. O. Ozturk, and J. J. Wortman, IEEE Trans. Electron. Devices. 39, 75 (1992); P. P. Apte and K. C. Saraswat, IEEE Trans. Semicond. Manuf. 5, 180 (1992); R. S. Gyurcsik, T. J. Riley, and F. Y. Sorrell, IEEE Trans. Semicond. Manuf. 4, 9 (1991).
5. A sample of recently published research of wafer temperature measurement and temperature uniformity during rapid thermal processing includes: F. Y. Sorrell, S. Yu, and W. J. Kiether, IEEE Trans. Semicond. Manuf 7, 454 (1994): Y. J. Lee, B. T. Khuriyakub, and K. C. Saraswat, Rev. Sci. Instrum. 65, 974 (1994); F. Y. Sorrell, M. J. Fordham, M. O. Ozturk, and J. J. Wortman, IEEE Trans. Electron. Devices. 39, 75 (1992); P. P. Apte and K. C. Saraswat, IEEE Trans. Semicond. Manuf. 5, 180 (1992); R. S. Gyurcsik, T. J. Riley, and F. Y. Sorrell, IEEE Trans. Semicond. Manuf. 4, 9 (1991).
6. A sample of recently published research of wafer temperature measurement and temperature uniformity during rapid thermal processing includes: F. Y. Sorrell, S. Yu, and W. J. Kiether, IEEE Trans. Semicond. Manuf 7, 454 (1994): Y. J. Lee, B. T. Khuriyakub, and K. C. Saraswat, Rev. Sci. Instrum. 65, 974 (1994); F. Y. Sorrell, M. J. Fordham, M. O. Ozturk, and J. J. Wortman, IEEE Trans. Electron. Devices. 39, 75 (1992); P. P. Apte and K. C. Saraswat, IEEE Trans. Semicond. Manuf. 5, 180 (1992); R. S. Gyurcsik, T. J. Riley, and F. Y. Sorrell, IEEE Trans. Semicond. Manuf. 4, 9 (1991).
7. A sample of recently published research of wafer temperature measurement and temperature uniformity during rapid thermal processing includes: F. Y. Sorrell, S. Yu, and W. J. Kiether, IEEE Trans. Semicond. Manuf 7, 454 (1994): Y. J. Lee, B. T. Khuriyakub, and K. C. Saraswat, Rev. Sci. Instrum. 65, 974 (1994); F. Y. Sorrell, M. J. Fordham, M. O. Ozturk, and J. J. Wortman, IEEE Trans. Electron. Devices. 39, 75 (1992); P. P. Apte and K. C. Saraswat, IEEE Trans. Semicond. Manuf. 5, 180 (1992); R. S. Gyurcsik, T. J. Riley, and F. Y. Sorrell, IEEE Trans. Semicond. Manuf. 4, 9 (1991).
8. L. L. Tedder, G. W. Rubloff, I. Shareef, M. Anderle, D. H. Kim, and G. Parsons, J. Vac. Sci. Technol. B 13, 1924 (1995).
9. R. Rosenberg, D. Sander, and M. Liehr, Proceedings of the Microcontamination Conference 1993, San Jose, CA (Canon Communications, Santa Monica, CA, 1993), p. 99.
10. L. M. Williams, L. C. Frees, and T. Vo, presented at the 41st National Symposium of the American Vacuum Society, 24-28 October 1994, Denver, CO (unpublished).
11. N. Müller, Vacuum 44, 623 (1993).
12. M. E. Buckley, Vacuum 44, 665 (1993).
13. L. C. Frees, LPCVD Blanket Tungsten at SEMATECH, Transpector Aggressive Gas Monitor Applications Report, Leybold Inficon, Inc., July 1994.
14. D. W. Greve, T. J. Knight, X. Cheng, B. H. Krogh and M. A. Gibson, J. Vac. Sci. Technol. B 14, 489 (1996).
15. A C-language multitasking program developed by Dr. John R. Hauser at North Carolina State University (unpublished).
16. N. A. Masnari, J. R. Hauser, G. Lucovsky, D. M. Maher, R. J. Markunas, M. O. Ozturk, and J. J. Wortman, Proc. IEEE 81, 42 (1993).
17. This response time is shorter than previously reported (Ref. 3) and is considered accurate based on the more careful method of measurement described here. Longer response times can be observed dependent on MS data collection settings, e.g., larger amu ranges require longer scan times and low signal levels require increased gain settings which increase scan times.
18. 4 is not sufficient at ≤S650°C for in situ diagnostics using mass spectrometry.