Run to run control in tungsten chemical vapor deposition using H2/WF6 at low pressures

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 19, Issue 5, 2001, Pages 1931-1941

  Sreenivasan, Ramaswamy ^a   Gougousi, Theodosia ^a   Xu, Yiheng ^a   Kidder Jr , John ^a   Zafiriou, Evanghelos ^a   Rubloff, Gary W ^a  

^a UNIVERSITY OF MARYLAND   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALGORITHMS; CHEMICAL VAPOR DEPOSITION; IONS; MASS SPECTROMETRY; TEMPERATURE; THICKNESS MEASUREMENT; TUNGSTEN;

RUN TO RUN CONTROL (RTR);

WSI CIRCUITS;

EID: 0035439933     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1406159     Document Type: Article

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