Process sensing and metrology in gate oxide growth by rapid thermal chemical vapor deposition from SiH4 and N2O

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 17, Issue 4, 1999, Pages 1417-1423

  Lu, Guangquan ^a  

^a NORTH CAROLINA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 22644451264     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (17)

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