Control of a III-V MOCVD process using ultraviolet absorption and ultrasonic concentration monitoring

IEEE Transactions on Control Systems Technology

Volumn 9, Issue 5, 2001, Pages 728-740

  Flynn, Monique Gaffney ^b   Smith, Roy ^a,c   Abraham, Patrick ^a,d   DenBaars, Steven ^c  

^a IEEE   (United States)

^b CHARLES STARK DRAPER LABORATORY   (United States)

^c University of California   (United States)

^d JDS UNIPHASE   (United States)

Author keywords

Compound semiconductor; Process control; Semi conductor manufacturing; Ultrasonic concentration monitor; Ultraviolet (UV) absorption

Indexed keywords

SPECTROSCOPIC ELLIPSOMETERS;

ELLIPSOMETRY; LIGHT ABSORPTION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; SEMICONDUCTOR GROWTH; SEMICONDUCTOR SUPERLATTICES; SENSORS; X RAY DIFFRACTION ANALYSIS;

PROCESS CONTROL;

EID: 0035444835     PISSN: 10636536     EISSN: None     Source Type: Journal    
DOI: 10.1109/87.944468     Document Type: Article

References (21)

1. Application of ellipsometry to crystal growth by organometallic molecular beam epitaxy
2. Feedback control of MOCVD growth of submicron compound semiconductor films
3. Real-time control of HgCdTe growth by organometallic vapor phase epitaxy using spectroscopic ellipsometry
4. Measurement and control of reagent concentrations in MOCVD reactor using ultrasonics
5. Control of III-V epitaxy in a metalorganic chemical vapor deposition process: Impact of source flow control on composition and thickness
6. Parametric analysis of control parameters in MOCVD
7. Monitoring of MOCVD reactants by UV absorption
8. Thermal decomposition of metalorganic compounds used in the MOCVD of InP
9. In-situ monitoring of MOVPE alkyl concentrations by UV absorption
10. Growth of InAs/GaSb strained layer superlattices by MOVPE III. Use of UV apbsorption to monitor alkyl stability in the reactor
11. The physics of ultraviolet photodeposition
12. 3
13. Ultraviolet absorption spectra of metalorganic molecules diluted in hydrogen gas
14. Gas phase ultraviolet spectroscopy of high-temperature superconductor precursors for chemical vapor deposition processing