Diffusion profiles of high dosage Cr and V ions implanted into silicon

Journal of Applied Physics

Volumn 96, Issue 2, 2004, Pages 1053-1058

  Zhang, P ^a,c   Stevie, F ^b   Vanfleet, R ^a,d   Neelakantan, R ^a   Klimov, M ^a   Zhou, D ^a   Chow, L ^a  

^a UNIVERSITY OF CENTRAL FLORIDA   (United States)

^b NORTH CAROLINA STATE UNIVERSITY   (United States)

^c UNIVERSITY OF CALIFORNIA   (United States)

^d Brigham Young University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CROSS SECTIONAL TRANSMISSION ELECTRON MICROSCOPY (XTEM); CRYSTALLINE SILICON; SOLID PHASE EPITAXIAL GROWTH; THERMAL ANNEALING;

AMORPHOUS SILICON; ANNEALING; CHROMIUM; CRYSTAL IMPURITIES; CRYSTALLINE MATERIALS; EPITAXIAL GROWTH; ION IMPLANTATION; SECONDARY ION MASS SPECTROMETRY; TRANSMISSION ELECTRON MICROSCOPY; VANADIUM;

SEMICONDUCTING SILICON;

EID: 3242679099     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1756221     Document Type: Article

References (39)

1. K. Graff, Metal Impurities in Silicon-device Fabrication, 2nd ed. (Springer, Berlin, 2001).
2. E. R. Weber, Appl. Phys. A: Solids Surf. 30, 1 (1983).
3. A. A. Istratov, H. Hieslmair, and E. R. Weber, Appl. Phys. A: Mater. Sci. Process. 69, 13 (1999).
4. A. A. Istratov, H. Hieslmair, and E. R. Weber, Appl. Phys. A: Mater. Sci. Process. 70, 489 (2000).
5. N. T. Bendik, V. S. Garnyk, and L. S. Milevski, Sov. Phys. Solid State 12, 150 (1970).
6. W. Würker, K. Roy, and J. Hesse, Mater. Res. Bull. 9, 971 (1974).
7. J. Zhu, J. Diz, D. Barbier, and A. Laugier, Mater. Sci. Eng., B 4, 185 (1989).
8. J. Zhu, G. Chaussemy, and D. Barbier, Appl. Phys. Lett. 54, 611 (1989).
9. S. H. Park and D. K. Schroder, J. Appl. Phys. 78, 801 (1995).
10. Y. Sato, T. Takahashi, and M. Suezawa, Physica B 308, 434 (2001).
11. H. Nakashima, T. Sadoh, H. Kitagawa, and K. Hashimoto, Mater. Sci. Forum 143-147, 761 (1994).
12. G. K. Azimov, S. Z. Zainabidinov, and Y. I. Kozlov, Sov. Phys. Semicond. 23, 1169 (1989).
13. T. Sadoh and H. Nakashima, Appl. Phys. Lett. 58, 1653 (1991).
14. K. S. Jones, S. Prussin, and E. R. Weber, Appl. Phys. A: Solids Surf. 45, 1 (1988).
15. J. L. Benton, S. Libertino, P. Kringhoj, D. J. Eaglesham, J. M. Poate, and S., Coffa, J. Appl. Phys. 82, 120 (1997).
16. C. Ortiz, D. Mathiot, D. Alquier, C. Dubois, and R. Jerisian, Nucl. Instrum. Methods Phys. Res. B 178, 188 (2001).
17. J. X. Xia, T. Saito, R. Kim, T. Aoki, Y. Kamakura, and K. Taniguchi, J. Appl. Phys. 85, 7597 (1999).
18. D. Mathiot, A. Claverie, and A. Martinez, Defect Diffus. Forum 153, 11 (1998).
19. R. G. Wilson, J. Appl. Phys. 52, 3954 (1981).
20. R. G. Wilson, P. K. Vasudev, D. M. Jamba, C. A. Evans, and V. R. Deline, Appl. Phys. Lett. 36, 215 (1980).
21. H. Francois-St-Cyr, E. Anoshkina, F. Stevie, L. Chow, K. Richardson, and D. Zhou, J. Vac. Sci. Technol. B 19, 1769 (2001).
22. A. Polman, D. C. Jacobson, S. Coffa, J. M. Poate, S. Roorda, and W. C. Sinke, Appl. Phys. Lett. 57, 1230 (1990).
23. S. Coffa, J. M. Poate, D. C. Jacobson, W. Frank, and W. Gustin, Phys. Rev. B 45, 8355 (1992).
24. A. Y. Kuznetsov and B. G. Svensson, Appl. Phys. Lett. 66, 2229 (1995).
25. L. Csepregi, E. F. Kennedy, J. W. Mayer, and T. W. Sigmon, J. Appl. Phys. 49, 3906 (1978).
26. G. L. Olson and J. A. Roth, Mater. Sci. Rep. 3, 1 (1988).
27. J. A. Roth, G. L. Olson, D. C. Jacobson, and J. M. Poate, Appl. Phys. Lett. 57, 1340 (1990).
28. L. Csepregi, E. F. Kennedy, T. J. Gallagher, J. W. Mayer, and T. W. Sigmon, J. Appl. Phys. 48, 4234 (1977).
29. S. Coffa, S. Libertino, and C. Spinella, Appl. Phys. Lett. 76, 321 (2000).
30. V. E. Borisenko, Semiconducting Suicides (Springer, Berlin, New York, 2000).
31. R Y. G. Ren, J. Michel, Q. Sun-Paduano, B. Zheng, H. Kitagawa, D. C. Jacobson, J. M. Poate, and L. C. Kimerling, in Proceedings of the MRS Spring Meeting, edited by G. S. Pomrenke, P. B. Klein, and D. W. Langer (Materials Research Society, San Francisco, CA, 1993), Vol. 301, p. 87.
32. D. C. Jacobson, J. M. Poate, and G. L. Olson, Appl. Phys. Lett. 48, 118 (1986).
33. S. U. Campisano, E. Rimini, P. Baeri, and G. Foti, Appl. Phys. Lett. 37, 170 (1980).
34. A. Y. Kuznetsov, B. G. Svensson, O. Nur, and L. Hultman, J. Appl. Phys. 84, 6644 (1998).
35. O. V. Aleksandrov, Y. A. Nikolaev, and N. A. Sobolev, Semiconductors 32, 1266 (1998).
36. J. M. Andrews and J. C. Phillips, Phys. Rev. Lett. 35, 56 (1975).
37. R. W. Mann and L. A. Clevenger, in Properties of Metal Suicides, edited by K. Maex and M. Van Rossum (IEE INSPEC, Stevenage, 1995).
38. G. Z. Pan and K. N. Tu, J. Appl. Phys. 82, 601 (1997).
39. K. Maex, M. Van Rossum, and A. Reader, in Properties of Metal Suicides, edited by K. Maex and M. Van Rossum (IEE INSPEC, Stevenage, 1995).