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Volumn 84, Issue 12, 1998, Pages 6644-6649

Nickel distribution in crystalline and amorphous silicon during solid phase epitaxy of amorphous silicon

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0001533332     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.369039     Document Type: Article
Times cited : (17)

References (33)
  • 27
    • 0020543433 scopus 로고
    • INSPEC, London
    • E. R. Weber, Appl. Phys. A: Solids Surf. 30, 3 (1983); see also Properties of Silicon (INSPEC, London, 1988).
    • (1988) Properties of Silicon
  • 29
    • 85034280218 scopus 로고    scopus 로고
    • note
    • Corresponds to the spacing of the Si(111) planes separating the a-Si and c-Si phases.
  • 33
    • 85034303596 scopus 로고    scopus 로고
    • note
    • Ni are reported to date.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.