Boron diffusion in pre-amorphised silicon: Interactions with the end of range defects

Defect and Diffusion Forum

Volumn 153-155, Issue , 1998, Pages 11-24

  Mathiot, D ^a   Claverie, A ^b   Martinez, A ^c  

^a UNIVERSITÉ DE STRASBOURG   (France)

^b CEMES CNRS   (France)

^c LAAS CNRS   (France)

Author keywords

Amorphisation; Anneal; Boron; Defect; Diffusion; Doping; Ion Implantation; Ostwald Ripening; Self Interstitials; Silicon

Indexed keywords

AMORPHIZATION; ANNEALING; BORON; DIFFUSION; DIFFUSION IN SOLIDS; DOPING (ADDITIVES); ION IMPLANTATION; OSTWALD RIPENING; SILICON;

AMORPHOUS/CRYSTALLINE INTERFACE; BORON DIFFUSIONS; DIFFUSION ENHANCEMENT; END-OF-RANGE DEFECTS; EXPERIMENTAL EVIDENCE; NUCLEATION STAGES; OSTWALD RIPENING THEORY; SELF INTERSTITIALS;

DEFECTS;

EID: 77950552924     PISSN: 10120386     EISSN: 16629507     Source Type: Journal    
DOI: 10.4028/www.scientific.net/ddf.153-155.11     Document Type: Article

References (42)

1. T.O. Sedgwick, A.E. Michel, V.R. Deline, S.A. Cohen, and J.B. Laski, J. Appl. Phys. 63 (1988), p. 1452
2. C. Carter, W. Maszara, D.K. Sadana, G.A. Rozgonyi, J. Liu, and J. Wortman, Appl. Phys. Lett. 44 (1984), p. 459
3. K.S. Jones, S. Prussin, and E.R. Weber, Appl. Phys. A 45 (1988), p. 1
4. J.R. Ayres and S.D. Brotherton. J. Appl. Phys. 71 (1992), p. 2702
5. M.E. Lunnonn, J.T. Chen, and J.E. Baker, J. Electrochem. Soc. 132 (1985), p. 2473
6. A. Tanaka, T. Yamaji, A. Uchiyama, T. Hayashi, T. Iwabuchi, and S. Nishikawa, Jpn. J. Appl. Phys. 29 (1990), p. L191
7. S.N. Hong, G.A. Ruggles, J.J. Wortman, E.R. Myers, and J.J. Hren, IEEE Trans. Electron Device ED-38 (1991), p. 28
8. D. Alquier, B. Van Eaaren, C. Bergaud, R. Plana, J. Graffeuil, and A. Martinez, Jpn. J. Appl. Phys. 36 (1997), p. 1999
9. M.C. Otzturk, J.J. Wortman, C.M. Osburn, G.A. Rozgonyi, E. Frey, W.K. Chu, and C. Lee, IEEE Trans. Electron Device ED-35 (1988) p. 659
10. D. Alquier, C. Bergaud, A. Martinez, M. Minondo, C. Jaussaud, L. Laânab, C. Bonafos, and A. Claverie, in Ion Beam Modification of Materials (Elsevier Science, 1996) p. 793
11. M. Servidori, R. Angelucci, F. Cembali, P. Negrini, S. Solmi, P. Zaumseil, and U. Winter, J. Appl. Phys. 61 (1987), p. 1834
12. D. Calder, H.M. Naguib, D. Houghton, and F.R Shepherd, Mater. Res. Soc. Symp. Proc. 33 (1985), p. 353
13. P.K. Vasudev, A.E. Schmitz, and G.L. Olson, Mater. Res. Soc. Symp. Proc. 35 (1985), p.367
14. C.I. Drowley, J. Adkisson, D. Peters, S.Y. Chiang, Mater. Res. Soc. Symp. Proc. 35 (1985), p. 375
15. T.E. Seidel, IEEE Electron Device Lett. EDL-4 (1983), p.353
16. S. J. Pennycook, R.J. Culbertson, and J. Narayan, J. Mater. Res. 1 (1986) p. 476
17. N.E.B. Cowern, K.J. Yallup, D.J. Godfrey, D.G. Hasko, R.A. McMahon, H. Ahmed, W.M. Stobbs, and D.S. McPhail, Mater. Res. Soc. Symp. Proc. 52 (1986), p. 65
18. R. Angelucci, P. Negrini, and S. Solmi. Appl. Phys. Lett. 49 (1986), p. 1468
19. F. Cembali, M. Servidori, E. Landi, and S. Solmi, Phys. Status Solidi A 94 (1986), p. 315
20. S. Guimares, E. Landi, and S. Solmi, Phys. Status Solidi A 95 (1986), p. 589
21. M. Delfino, D.K. Sadana, and A.E. Morgan. Apll. Phys. Lett. 49 (1986), p. 575
22. M. Servidori, Z. Sourek, and S. Solmi, J. Appl. Phys. 62 (1987), p. 1723
23. Y.M. Kim, G.Q. Lo, H. Kinoshita, D.L. Kwong, H.H. Tseng, and R. Hance, J. Elelectrochem. Soc. 138 (1991), p. 1122
24. K.S. Jones, L.H. Zhang, V. Krishnamoorthy, M. Law, D.S. Simons, P. Chi, L. Rubin, and R.G. Elliman, Appl. Phys. Lett. 68 (1996) p. 2672
25. A. Claverie, C. Bonafos, A. Martinez, M.M. Faye, C. Bergaud, and D. Mathiot, Nucl. Instr. and Meth. in Phys. Res. B 96 (1995), p. 202
26. C. Bonafos, M. Omri, B. de Mauduit, G. Ben Assayag, A. Claverie, D. Alquier, A. Martinez, and D. Mathiot. J. Appl. Phys. 82 (1997), p. 2855
27. R.B. Fair, in Impurity Doping Process in Silicon, edited by F.F.Y. Wang (North Holland, New York, 1981), Chap. 7
28. H.S. Chao, P.B. Griffin, and J.D. Plummer, Appl. Phys. Lett. 68 (1996) p. 3570
29. A. Claverie, L. Laânab, C. Bonafos, A. Martinez, C. Bergaud, and D. Mathiot. in ADEQUAT Deliverable D4125 (ESPRIT project 7236), March 1994, p. 27
30. S.K. Jones, C. Lombardi, A. Poncet, C. Hill, H. Jaouen, J. Lorenz, C. Lyden, K. De Mayer, J. Pelka, M. Rudan, and S. Solmi, in ESSDERC'93 Proc., Edited by J. Borel, P. Gentil, J.P. Noblanc, A. Nouailhat, and M. Verdone (Editions Frontiéres, 1993), p. 505
31. D. Mathiot and J.C. Pfister, J. Appl. Phys. 65 (1984), p. 3518
32. D. Mathiot and S. Martin, J. Appl. Phys. 70 (1991), p. 3071
33. K.S. Jones, K. Moller, J. Chen, M. Puga-Lambers, B. Freer, J. Berstein, and L. Rubin, J. Appl. Phys. 81 (1997), p. 6051
34. J. Fauré, A. Claverie, L. Laânab, and P. Bonhomme, Mater. Science and Engin. B22 (1994), p. 128
35. B. de Mauduit, L. Laânab, C. Bergaud, M.M. Faye, A. Martinez, and A. Claverie, Nucl. Inst. and Meth. in Phys. Res. B 84 (1994), p. 190
36. M. Seibt, J. Imschweiler, and H.A. Hefner, Mater. Res. Soc. Proc. 262 (1992), p. 1103
37. M. Seibt. Solid State Phenomena 32-33 (1993), p. 463
38. J.P. Biersack and L.G. Haggmark, Nucl. Inst. and Meth. in Phys. Res. 174 (1980), p. 257
39. M.M. Faye, L. Laânab, C. Vieu, J. Beauvillain, and A. Claverie, Mater. Science and Engin. B 21 (1993) p. 284
40. A. Claverie, L. Laânab, C. Bonafos, C. Bergaud, A. Martinez, and D. Mathiot, Nucl. Inst. and Method in Phys. Res. B 96 (1995), p. 202
41. K.S. Jones and D. Venables, J. Appl. Phys. 69 (1991), p. 2931
42. L. Laânab, C. Bergaud, M.M. Faye, J. Faure, A. Martinez and A. Claverie, Mat. Res. Soc. Symp. Proc. 279 (1993), p. 381