Secondary ion mass spectrometry characterization of the diffusion properties of 17 elements implanted into silicon

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 19, Issue 5, 2001, Pages 1769-1774

  Francois Saint Cyr, H ^a   Anoshkina, E ^b   Stevie, F ^c   Chow, L ^a   Richardson, K ^a   Zhou, D ^b  

^a UNIVERSITY OF CENTRAL FLORIDA   (United States)

^b University of Central Florida   (United States)

^c AGERE SYSTEMS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

HEAT TREATMENT; IMPURITIES; ION IMPLANTATION; SECONDARY ION MASS SPECTROMETRY; SILICON WAFERS; TEMPERATURE;

POSTHEAT TREATMENTS;

DIFFUSION;

EID: 0035440720     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1396638     Document Type: Article

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