Trapping of aluminium by dislocation loops in Si

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 178, Issue 1-4, 2001, Pages 188-191

  Ortiz, Ch ^a,b   Mathiot, D ^b   Alquier, D ^a   Dubois, Ch ^c   Jerisian R ^a  

^a UNIVERSITÉ DE TOURS   (France)

^b Institut de Physique Hubert Curien UDS CNRS   (France)

^c UNIVERSITÉ DE LYON   (France)

Author keywords

Aluminium; Amorphisation; Extended defects; Ion implantation; Trapping

Indexed keywords

ALUMINUM; AMORPHIZATION; DISLOCATIONS (CRYSTALS); ION IMPLANTATION; MICROMETERS;

DIRECT TRAPPING MECHANISMS; DISLOCATION LOOPS;

SEMICONDUCTING SILICON;

EID: 0035334862     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(00)00486-9     Document Type: Conference Paper

References (11)