High density plasma oxide etching using nitrogen trifluoride and acetylene

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 18, Issue 6, 2000, Pages 2749-2758

  Pruette, Laura ^a   Karecki, Simon ^a   Chatterjee, Ritwik ^a   Reif, Rafael ^a   Sparks, Terry ^b   Vartanian, Victor ^b  

^a Massachusetts Institute of Technology Cambridge   (United States)

^b MOTOROLA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACETYLENE; EMISSION SPECTROSCOPY; FOURIER TRANSFORM INFRARED SPECTROSCOPY; HELIUM; NITROGEN COMPOUNDS; PLASMA DENSITY; PLASTIC FILMS; SCANNING ELECTRON MICROSCOPY; SECONDARY ION MASS SPECTROMETRY;

NITROGEN TRIFLUORIDES; OXIDE ETCHING;

PLASMA ETCHING;

EID: 0034316846     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1290373     Document Type: Article

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