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Volumn 18, Issue 4, 2006, Pages 595-597

InAs-InAlGaAs quantum dot DFB lasers based on InP (001)

Author keywords

Continuous wave (CW) operation; Distributed feedback (DFB); InAs; InP(001); Laser; Quantum dot (QD)

Indexed keywords

CONTINUOUS WAVE LASERS; FIBER BRAGG GRATINGS; LIGHT REFLECTION; OPTICAL FIBER FABRICATION; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR QUANTUM DOTS;

EID: 32044460399     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2006.870187     Document Type: Article
Times cited : (24)

References (18)
  • 1
    • 0347948921 scopus 로고    scopus 로고
    • "Application of spectral-hole burning in the inhomogeneously broadened gain of self-assembled quantum dots to a multiwavelength-channel nonlinear optical device"
    • Oct
    • T. Akiyama, H. Kuwatsuka, T. Simoyama, Y. Nakata, K. Mukai, M. Sugawara, O. Wada, and H. Ishikawa, "Application of spectral-hole burning in the inhomogeneously broadened gain of self-assembled quantum dots to a multiwavelength-channel nonlinear optical device," IEEE Photon. Technol. Lett., vol. 12, no. 10, pp. 1301-1303, Oct. 2000.
    • (2000) IEEE Photon. Technol. Lett. , vol.12 , Issue.10 , pp. 1301-1303
    • Akiyama, T.1    Kuwatsuka, H.2    Simoyama, T.3    Nakata, Y.4    Mukai, K.5    Sugawara, M.6    Wada, O.7    Ishikawa, H.8
  • 2
    • 21544475375 scopus 로고
    • "Multidimensional quantum well laser and temperature dependence of it's threshold current"
    • Jun
    • Y. Arakawa and H. Sakaki, "Multidimensional quantum well laser and temperature dependence of it's threshold current," Appl. Phys. Lett., vol. 40, pp. 939-941, Jun. 1982.
    • (1982) Appl. Phys. Lett. , vol.40 , pp. 939-941
    • Arakawa, Y.1    Sakaki, H.2
  • 3
    • 0033904960 scopus 로고    scopus 로고
    • "Low-thereshold oxide-confined 1.3 μm quantum dot laser"
    • Mar
    • G. Park, O. B. Shchekin, D. L. Huffaker, and D. G. Deppe, "Low-thereshold oxide-confined 1.3 μm quantum dot laser," IEEE Photon. Technol. Lett., vol. 12, no. 3, pp. 230-232, Mar. 2000.
    • (2000) IEEE Photon. Technol. Lett. , vol.12 , Issue.3 , pp. 230-232
    • Park, G.1    Shchekin, O.B.2    Huffaker, D.L.3    Deppe, D.G.4
  • 4
    • 79956059480 scopus 로고    scopus 로고
    • "Height-controlled InAs quantum dots by using a thin InGaAs layer"
    • Jun
    • J. S. Kim, P. W. Yu, J. I. Lee, J. S. Kim, S. G. Kim, J.-Y. Leem, and M. Jeon, "Height-controlled InAs quantum dots by using a thin InGaAs layer," Appl. Phys. Lett., vol. 80, pp. 4714-4716, Jun. 2002.
    • (2002) Appl. Phys. Lett. , vol.80 , pp. 4714-4716
    • Kim, J.S.1    Yu, P.W.2    Lee, J.I.3    Kim, J.S.4    Kim, S.G.5    Leem, J.-Y.6    Jeon, M.7
  • 8
    • 0036640236 scopus 로고    scopus 로고
    • "Surface effects on shape, self-organization and photoluminescence of InAs islands grown on InAlAs/InP (001)"
    • Jul
    • J. Brault, M. Gendry, G. Grenet, G. Hollinger, J. Olivares, B. Salem, T. Benyattou, and G. Bremond, "Surface effects on shape, self-organization and photoluminescence of InAs islands grown on InAlAs/InP (001)," J. Appl. Phys., vol. 92, pp. 506-510, Jul. 2002.
    • (2002) J. Appl. Phys. , vol.92 , pp. 506-510
    • Brault, J.1    Gendry, M.2    Grenet, G.3    Hollinger, G.4    Olivares, J.5    Salem, B.6    Benyattou, T.7    Bremond, G.8
  • 9
    • 0345359889 scopus 로고    scopus 로고
    • "Effects of a thin InGaAs layer on InAs quantum dots embedded in InAl(Ga)As"
    • Nov
    • J. S. Kim, J. H. Lee, S. U. Hong, W. S. Han, H.-S. Kwack, and D. K. Oh, "Effects of a thin InGaAs layer on InAs quantum dots embedded in InAl(Ga)As," Appl. Phys. Lett., vol. 83, pp. 3785-3787, Nov. 2003.
    • (2003) Appl. Phys. Lett. , vol.83 , pp. 3785-3787
    • Kim, J.S.1    Lee, J.H.2    Hong, S.U.3    Han, W.S.4    Kwack, H.-S.5    Oh, D.K.6
  • 11
    • 0000020557 scopus 로고    scopus 로고
    • "Ground-state lasing at room temperature in long-wavelength InAs quantum-dot lasers on InP (311)B substrates"
    • Jan
    • H. Saito, K. Nishi, and S. Sugou, "Ground-state lasing at room temperature in long-wavelength InAs quantum-dot lasers on InP (311)B substrates," Appl. Phys. Lett., vol. 78, pp. 267-269, Jan. 2001.
    • (2001) Appl. Phys. Lett. , vol.78 , pp. 267-269
    • Saito, H.1    Nishi, K.2    Sugou, S.3
  • 13
    • 23844448061 scopus 로고    scopus 로고
    • "Room temperature continuous-wave operation of buried ridge stripe lasers using InAs-InP (100) quantum dots as active core"
    • Jul
    • F. Lelarge, B. Rousseau, B. Dagens, F. Poingt, F. Pommereau, and A. Accard, "Room temperature continuous-wave operation of buried ridge stripe lasers using InAs-InP (100) quantum dots as active core," IEEE Photon. Technol. Lett., vol. 17, no. 7, pp. 1369-1371, Jul. 2005.
    • (2005) IEEE Photon. Technol. Lett. , vol.17 , Issue.7 , pp. 1369-1371
    • Lelarge, F.1    Rousseau, B.2    Dagens, B.3    Poingt, F.4    Pommereau, F.5    Accard, A.6
  • 17
    • 6344294312 scopus 로고    scopus 로고
    • "Self-assembled InAs quantum dots on InP(001) for long-wavelength laser applications"
    • Oct
    • J. S. Kim, J. H. Lee, S. U. Hong, H.-S. Kwack, C. W. Lee, and D. K. Oh, "Self-assembled InAs quantum dots on InP(001) for long-wavelength laser applications," ETRI J., vol. 26, pp. 475-480, Oct. 2004.
    • (2004) ETRI J. , vol.26 , pp. 475-480
    • Kim, J.S.1    Lee, J.H.2    Hong, S.U.3    Kwack, H.-S.4    Lee, C.W.5    Oh, D.K.6
  • 18
    • 0141716888 scopus 로고    scopus 로고
    • "Lasing characteristics of InAs quantum-dot lasers on (001) InP substrate"
    • Sep
    • Y. Qui, D. Uhl, R. Chacon, and R. Q. Yang, "Lasing characteristics of InAs quantum-dot lasers on (001) InP substrate," Appl. Phys. Lett., vol. 83, pp. 1704-1706, Sep. 2003.
    • (2003) Appl. Phys. Lett. , vol.83 , pp. 1704-1706
    • Qui, Y.1    Uhl, D.2    Chacon, R.3    Yang, R.Q.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.