InAs/GaInAs quantum dot DFB lasers emitting at 1.3μm

Electronics Letters

Volumn 37, Issue 10, 2001, Pages 634-636

  Klopf, F ^a   Krebs, R ^a   Wolf, A ^a   Emmerling, M ^a   Reithmaier, J P ^a   Forchel, A ^a  

^a UNIVERSITY OF WÜRZBURG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

GRADIENT INDEX OPTICS; HETEROJUNCTIONS; LASER RESONATORS; LIGHT EMISSION; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM DOTS; SINGLE MODE FIBERS;

QUANTUM DOT DISTRIBUTED FEEDBACK LASERS; SIDEMODE SUPPRESSION RATIO; SINGLEMODE EMISSION;

DISTRIBUTED FEEDBACK LASERS;

EID: 0035837186     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20010420     Document Type: Article

References (8)

1. 0.85As quantum well
2. Low-threshold continuous-wave two-stack quantum-dot laser with reduced temperature sensitivity
3. Low-threshold current density 1.3μm InAs quantum-dot lasers with the dots-in-a-well (DWELL) structure
4. 1.3μm CW lasing characteristics of self-assembled InGaAs-GaAs quantum dots
5. High temperature operating 1.3μm quantum-dot lasers for telecommunication applications
6. InGaAs/AlGaAs quantum dot DFB lasers operating up to 213°C
7. Optical gain in InAs/InGaAs quantum-dot structures: Experiments and theoretical model
8. Low-threshold quantum dot lasers with 201 nm tuning range