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Volumn 92, Issue 10, 2002, Pages 5852-5855

Proportionality of vacancy concentration to ion implantation fluence

Author keywords

[No Author keywords available]

Indexed keywords

DAMAGE CASCADES; DEFECT DIFFUSION; FLUENCES; IMPLANTATION FLUENCE; ION FLUENCES; SUBLINEAR; VACANCY ACCUMULATION; VACANCY CONCENTRATION; VACANCY PRODUCTION;

EID: 0037112962     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1516265     Document Type: Article
Times cited : (3)

References (21)
  • 10
    • 0003305817 scopus 로고    scopus 로고
    • Positron Annihilation in Semiconductors, Defect Studies
    • Springer, Berlin
    • R. Krause-Rehberg and H. S. Leipner, Positron Annihilation in Semiconductors, Defect Studies, Springer Series in Solid-State Sciences Vol. 127 (Springer, Berlin, 1999), p. 171.
    • (1999) Springer Series in Solid-State Sciences , vol.127 , pp. 171
    • Krause-Rehberg, R.1    Leipner, H.S.2
  • 11
    • 84861449505 scopus 로고    scopus 로고
    • S. Eichler (unpublished)
    • S. Eichler (unpublished).
  • 12
    • 0011925860 scopus 로고
    • rae RAEFBL 0033-7579
    • L. T. Chadderton, Radiat. Eff. 8, 1 (1971). rae RAEFBL 0033-7579
    • (1971) Radiat. Eff. , vol.8 , pp. 1
    • Chadderton, L.T.1
  • 16
    • 0000493768 scopus 로고
    • ed. by P. J. Schultz, G. R. Massoumi, P. J. Simpson (AIP, New York)
    • G. C. Aers, Positron Beams for Solids and Surfaces, ed. by P. J. Schultz, G. R. Massoumi, P. J. Simpson (AIP, New York, 1991), p. 162.
    • (1991) Positron Beams for Solids and Surfaces , pp. 162
    • Aers, G.C.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.