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Volumn 82, Issue 24, 1999, Pages 4870-4873
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Theory of the nucleation, growth, and structure of hydrogen-induced extended defects in silicon
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Author keywords
[No Author keywords available]
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Indexed keywords
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EID: 4244065232
PISSN: 00319007
EISSN: 10797114
Source Type: Journal
DOI: 10.1103/PhysRevLett.82.4870 Document Type: Article |
Times cited : (73)
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References (16)
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