Surface Properties and Electrical Characteristics of Rapid Thermal Annealed 4H-SiC

Materials Science Forum

Volumn 433-436, Issue , 2003, Pages 609-612

  Bauer, A J ^a   Rambach, M ^a   Frey, L ^a   Weiss, R ^a   Rupp, R ^b   Friedrichs, P ^c   Schorner R ^c   Peters, D ^c  

^a UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

^b INFINEON TECHNOLOGIES AG   (Germany)

^c SiCED Electronics Development GmbH and Co KG   (Germany)

Author keywords

4H SiC; Ion Implantation; RTP; Sheet Resistance; Surface Roughness

Indexed keywords

ALUMINUM; ARGON; EPITAXIAL GROWTH; HIGH TEMPERATURE EFFECTS; ION IMPLANTATION; NITROGEN; RAPID THERMAL ANNEALING; SURFACE PROPERTIES; SURFACE ROUGHNESS;

SHEET RESISTANCE;

SILICON CARBIDE;

EID: 18744421066     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.433-436.609     Document Type: Conference Paper

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