Morphological evolution of SiC(0001) surfaces without ambient gas by high temperature annealing in high-vacuum

Materials Science Forum

Volumn 457-460, Issue I, 2004, Pages 403-406

  Yasushi, Asaoka ^a   Sano, Naokatsu ^a   Kaneko, Tadaaki ^a  

^a KWANSEI GAKUIN UNIVERSITY   (Japan)

Author keywords

AFM; CNT; High Vacuum; Step Bunching; Surface Morphology; Surface Preparation

Indexed keywords

ANNEALING; ATOMIC FORCE MICROSCOPY; CARBON NANOTUBES; COOLING; HEATING; MORPHOLOGY; VACUUM;

AFM; CNT; HIGH-VACUUM; STEP BUNCHING; SURFACE PREPARATION;

SILICON CARBIDE;

EID: 8644274737     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.457-460.403     Document Type: Conference Paper

References (7)

1. F. Owman, C. Hallin, P. Martensson and E. Janzen: J. Cryst. Growth Vol. 167 (1996), p. 391.
2. S. Nakamura, T. Kimoto and H. Matsunami: Appl. Phys.Lett. Vol. 76(2000), p. 3412.
3. Z. Y. Xie and al: J. Cryst. Growth Vol. 217 (2000), p. 115.
4. G. Younes and al: Appl. Suf. Sci. Vol. 207(2003), p. 200.
5. N. Ohtani and al: J. Cryst. Growth Vol. 210 (2000), p. 613.
6. M. Kusunoki and: Appl. Phys. Lett. Vol. 77 (2000), p. 531.
7. F. Dulot and al: Appl. Surf. Sci. Vol. 187 (2002), p. 319.