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Materials Science Forum

Volumn 353-356, Issue , 2001, Pages 567-570

Effect of residual damage on carrier transport properties in a 4H-SiC double implanted bipolar junction transistor

(7) Ortolland, S a Wright, N G a Johnson, C M a Knights, A P b Coleman, P G c Burrows, C P c Pidduck, A J d

a NEWCASTLE UNIVERSITY (United Kingdom)

b UNIVERSITY OF SURREY (United Kingdom)

c University of Bath (United Kingdom)

d DEFENCE SCIENCE AND TECHNOLOGY LABORATORY (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ATOMIC FORCE MICROSCOPY; BIPOLAR TRANSISTORS; ELECTRON TRANSPORT PROPERTIES; FAILURE ANALYSIS; ION IMPLANTATION; MORPHOLOGY; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTOR DOPING; SURFACE ROUGHNESS; SURFACES; THERMAL EFFECTS;

BIPOLAR JUNCTION TRANSISTOR; CARRIER TRANSPORT PROPERTIES; RESIDUAL DAMAGE;

SILICON CARBIDE;

EID: 18244427466 PISSN: 02555476 EISSN: None Source Type: Conference Proceeding
DOI: 10.4028/www.scientific.net/msf.353-356.567 Document Type: Article

Times cited : (2)

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