Effect of adding Ar on the thermal stability of chemical vapor deposited fluorinated silicon oxide using an indirect fluorinating precursor

Applied Physics Letters

Volumn 70, Issue 19, 1997, Pages 2556-2558

  Chang, Kow Ming ^a   Wang, Shih Wei ^a   Li, Chii Horng ^a   Yeh, Ta Hsun ^a   Yang, Ji Yi ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0343348082     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.118939     Document Type: Article

References (5)

1. R. K. Laxman, Semicond. Int. 5, 71 (1995).
2. S. W. Lim, Y. Shimogaki, Y. Nakano, K. Tada, and H. Komiyama, Appl. Phys. Lett. 68, 832 (1996).
3. K. M. Chang, S. W. Wang, C. J. Wu, C. H. Li, T. H. Yeh, and J. Y. Yang, First International Symposium on Low and High Dielectric Constant Materials and Technology, Los Angeles, May 1996.
4. K. M. Chang, S. W. Wang, C. J. Wu, T. H. Yeh, C. H. Li, and J. Y. Yang, Appl. Phys. Lett. 69, 1238 (1996).
5. P. Singer, Semicond. Int. 5, 88 (1996).