Numerical analysis of transition energy shift in InAs/GaAs quantum dots induced by strain-reducing layers

Physica Status Solidi C: Conferences

Volumn , Issue 4, 2003, Pages 1157-1160

  Kakitsuka, T ^a   Saito, T ^b   Nakaoka, T ^b   Arakawa, Y ^a,b   Ebe, H ^c   Sugawara, M ^c   Yoshikuni, Y ^a  

^a NTT CORPORATION   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

^c FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EFFECTIVE MASS APPROXIMATION; INAS/GAAS QUANTUM DOTS; RED SHIFT; STRAIN DISTRIBUTIONS; STRAIN REDUCING LAYERS; STRAIN REDUCTION; TRANSITION ENERGY;

ELECTRONIC STRUCTURE;

SEMICONDUCTOR QUANTUM DOTS;

EID: 84875098439     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200303026     Document Type: Conference Paper

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