Inhomogeneous strain state in a rectangular InGaAs quantum wire/GaAs barrier specimen prepared for cross sectional high-resolution transmission electron microscopy

Journal of Applied Physics

Volumn 96, Issue 3, 2004, Pages 1644-1648

  Yoo, Yo Han ^a   Lee, Woong ^b   Shin, Hyunho ^c  

^a Agency for Defence Development   (South Korea)

^b Yonsei University   (South Korea)

^c Seoul National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ASPECT RATIO; DATA REDUCTION; FINITE ELEMENT METHOD; GEOMETRY; IMAGE PROCESSING; NANOSTRUCTURED MATERIALS; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WELLS; SEMICONDUCTOR QUANTUM WIRES; STRAIN RATE; TRANSMISSION ELECTRON MICROSCOPY;

LATTICE-MISMATCH; STRAIN INFORMATION; STRAIN MONITORING; STRAIN STATE;

SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

EID: 4043162847     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1763995     Document Type: Article

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