Study and optimization of room temperature inductively coupled plasma etching of InP using Cl2/CH4/H2 and CH 4/H2

Journal of Crystal Growth

Volumn 288, Issue 1, 2006, Pages 213-216

  Lee, Chee Wei ^a   Nie, D ^a   Mei, T ^a   Chin, M K ^a  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

A1. Dry etching; B2. III V Semiconductor; B2. Inductively coupled plasma

Indexed keywords

COST EFFECTIVENESS; DRY ETCHING; INDUCTIVELY COUPLED PLASMA; OPTIMIZATION; POLYMERS; SEMICONDUCTING INDIUM PHOSPHIDE; SILICA; SURFACE ROUGHNESS;

III-V SEMICONDUCTORS; POLYMER CONTAMINATION; SUBSTRATE HEATING; TAGUCHI METHOD;

PLASMA ETCHING;

EID: 31644446211     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2005.12.058     Document Type: Conference Paper

References (29)

1. C.-Y. Park J. Vac. Sci. Technol. B 13 1995 974
2. B.-T. Lee IEEE Photon. Technol. Lett. 5 1993 279
3. P.D. Swanson IEEE Photon. Technol. Lett. 7 1995 605
4. H. Hatate Jpn J. Appl. Phys. 37 1998 7172
5. S. Park IEEE J. Quant. Electron. 41 2005 351
6. D.G. Rabus IEEE J. Select. Topics Quant. Electron. 8 2002 1405
7. R. Grover IEEE Photon. Technol. Lett. 15 2003 1082
8. G. Franz J. Electrochem. Soc. 137 1990 2896
9. T.R. Hayes J. Vac. Sci. Technol. B 7 1989 1130
10. C.S. Whelan, T.E. Kazior, and K.Y. Hur J. Vac. Sci. Technol. B 15 1997 1728
11. H.-Y. Chen, and H.E. Ruda J. Vac. Sci. Technol. B 20 2001 47
12. J.W. McNabb J. Vac. Sci. Technol. B 9 1991 3535
13. J. Werking Appl. Phys. Lett. 58 1991 2003
14. K. Asakawa Jpn J. Appl. Phys. 37 1998 373
15. J. Lin J. Vac. Sci. Technol. B 22 2004 510
16. T. Nishibe, and S. Nunoue Jpn J. Appl. Phys. 29 1990 2449
17. G.A. Vawter, and C.I.H. Ashby J. Vac. Sci. Technol. B 12 1994 3374
18. A. Matsutani Jpn J. Appl. Phys. 38 1999 4260
19. J. Etrillard J. Vac. Sci. Technol. A 15 1997 626
20. F. Ren Appl. Phys. Lett. 67 1995 2497
21. H.-Y. Chen, H.E. Ruda, and A.Z. Navarro J. Appl. Phys. 89 2001 5322
22. C. Constantine Appl. Phys. Lett. 61 1992 2899
23. J.W. Lee, J. Hong, and S.J. Pearton Appl. Phys. Lett. 68 1996 847
24. C.-Z. Sun Chin. Phys. Lett. 20 2003 1312
25. R.J. Shul Solid State Electron. 42 1998 2259
26. M.D. Bryne, S. Taguchi, in: ASQC Quality Congress Transactions, 1986, p. 168.
27. J.S. Yu, and Y.T. Lee Semicond. Sci. Technol. 17 2002 230
28. I. Adesida J. Vac. Sci. Technol. B 8 1990 1357
29. J.A. Diniz Solid State Electron. 42 1998 1947