Higher reliability tetraethylorthosilicate SiO2 gate insulator in polysilicon thin film transistors formed by two-step deposition method

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 43, Issue 10, 2004, Pages 6937-6942

  Chae, Junghun ^a   Kim, Eugene ^a   Jung, Young Sup ^a   Kim, Jong Il ^a   Yang, Myung Soo ^a   Kim, Chang Dong ^a  

^a LG Display Co Ltd   (South Korea)

Author keywords

Gate insulator; SiO2; TEOS; TFT reliability

Indexed keywords

DEPOSITION; GATES (TRANSISTOR); PASSIVATION; POLYCRYSTALLINE MATERIALS; POLYSILICON; RELIABILITY; SILICA; SOLIDIFICATION;

GATE INSULATORS; SEQUENTIAL LATERAL SOLIDIFICATION (SLS); TEOS; TFT RELIABILITY;

THIN FILM TRANSISTORS;

EID: 10844256377     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.43.6937     Document Type: Article

References (5)

1. Y. Oana: International Display Manufacturing Conf. (2000) p. 57.
2. N. Ibaraki: SID Dig. (1999) p. 172.
3. S. W. Lee et al.: IEEE Electron Device. Lett. 24 (2003) 174.
4. Y. H. Kim, M. S. Hwang and H. J. Kim: J. Appl. Phys. 90 (2001) 3367.
5. H. W. Kim: Ph. D. Thesis, Pohang University of Science and Technology (2001).