Heat treatment in high pressure H2O vapor used for improvement of Si - O bonding network near SiO2/Si interface

Thin Solid Films

Volumn 335, Issue 1-2, 1998, Pages 138-141

  Sameshima, Toshiyuki ^a   Sakamoto, Keiji ^a   Satoh, Mitsuru ^a  

^a TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY   (Japan)

Author keywords

Heat treatment; Interfaces; Silicon oxide; Water

Indexed keywords

ANNEALING; CHEMICAL BONDS; CHEMICAL RELAXATION; FILM GROWTH; HEAT TREATMENT; INTERFACES (MATERIALS); OXIDATION; SILICA; VAPOR PRESSURE; WATER;

BONDING NETWORK; PLASMA OXIDIZED LAYERS;

THIN FILMS;

EID: 0032306429     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(98)00887-6     Document Type: Article

References (9)

1. T. Serikawa, S. Shirai, A. Okamoto, S. Suyama, IEEE Trans. Electron Devices ED36 (1989) 1929.
2. A. Kohno, T. Sameshima, N. Sano, M. Sekiya, M. Hara, IEEE Trans. Electron Devices 42 (1995) 251.
3. N. Yasuda, A. Toriumi, Proc. Int. Conf. on Solid State Devices and Materials, Jpn. J. Appl. Phys., Tokyo, 1994, p. 841.
4. C.H. Bjorkman, J.T. Fitch, G. Lucovsky, Appl. Phys. Lett. 56 (1990) 1983.
5. 2 Interfaces, Plenum Press, New York, 1988, p. 139.
6. M. Tabakomori, H. Ikoma, Jpn. J. Appl. Phys. 36 (1997) 5409.
7. T. Sameshima, M. Satoh, Jpn. J. Appl. Phys. 36 (1997) L687.
8. J.T. Fitch, C.H. Bjorkman, J.J. Sumakeris, G. Lucovsky, MRS Symp. Proc. 130 (1988) 289.
9. S. Maekawa, K. Okude, T. Ohishi, J. Sol Gel Sci. Technol. 2 (1994) 497.