High-pressure H2O vapor heat treatment used to fabricate poly-Si thin film transistors

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 41, Issue 9 A/B, 2002, Pages

  Watakabe, Hajime ^a   Sameshima, Toshiyuki ^a  

^a TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY   (Japan)

Author keywords

Defect states; Laser crystallization; Mobility; Threshold voltage

Indexed keywords

CARRIER MOBILITY; CRYSTAL DEFECTS; CRYSTALLIZATION; EXCIMER LASERS; HEAT TREATMENT; HIGH PRESSURE EFFECTS; INTERFACES (MATERIALS); IRRADIATION; POLYSILICON; THRESHOLD VOLTAGE;

LASER CRYSTALLIZATION;

THIN FILM TRANSISTORS;

EID: 0037107058     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.41.l974     Document Type: Article

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