Improvement in characteristics of polycrystalline silicon thin-film transistors by heating with high-pressure H2O vapor

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 37, Issue 9 PART A/B, 1998, Pages

  Sameshima, Toshiyuki ^a   Satoh, Mitsuru ^a   Sakamoto, Keiji ^a   Ozaki, Kentaro ^a   Saitoh, Keiko ^a  

^a TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY   (Japan)

Author keywords

Fixed oxide charge; Laser crystallization; LPCVD; Remote plasma CVD; SiO2 Si interfaces

Indexed keywords

ANNEALING; ATMOSPHERIC PRESSURE; CARRIER MOBILITY; CRYSTALLIZATION; ELECTRIC CURRENTS; HEAT TREATMENT; HIGH PRESSURE EFFECTS; INTERFACES (MATERIALS); PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING SILICON; WATER;

DRAIN CURRENT; FIXED OXIDE CHARGE; LASER CRYSTALLIZATION; ON OFF DRAIN CURRENT RATIO;

THIN FILM TRANSISTORS;

EID: 0032155717     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.l1030     Document Type: Article

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