N-type doping for single-walled carbon nanotubes by oxygen ion implantation with 25 eV ultralow-energy ion beam

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 44, Issue 11, 2005, Pages 8237-8239

  Kamimura, Takafumi ^a,b   Yamamoto, Kazuhiro ^b,c   Kawai, Takushi ^d   Matsumoto, Kazuhiko ^a,b,c  

^a OSAKA UNIVERSITY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^c NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^d MEIJI UNIVERSITY   (Japan)

Author keywords

Carbon nanotube; Doping; Field effect transistor; Ion implantation; N type; Ultralow energy ion beam

Indexed keywords

DOPING (ADDITIVES); FIELD EFFECT TRANSISTORS; ION BEAMS; ION IMPLANTATION; OXYGEN; THRESHOLD VOLTAGE;

N-TYPE; ULTRALOW-ENERGY ION BEAM;

CARBON NANOTUBES;

EID: 31544469754     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.44.8237     Document Type: Article

References (27)

1. S. Iijima: Nature 354 (1991) 56.
2. L. Qin, C. X. Zhao, K. Hirahara, Y. Miyamoto, Y. Ando and S. Iijima: Nature 408 (2000) 50.
3. N. Wang, Z. K. Tang, G. D. Li and J. S. Chen: Nature 408 (2000) 50.
4. L. C. Venema, J. W. G. Wildoer, J. W. Janssen, A. J. Tans, H. L. J. T. Tuinstra, L. P. Kouwenhoven and C. Dekker: Science 52 (1999) 283.
5. M. Bockrath, D. H. Cobden, J. Lu, A. G. Rinzler, R. E. Smalley, L. Balents and P. L. McEuen: Nature 397 (1999) 598.
6. K. Tsukagoshi, B. W. Alphenaar and H. Ago: Nature 401 (1999) 572.
7. W. Liang, M. Bockrath, D. Bozovic, J. H. Hafner, M. Tinkham and H. Park: Nature 411 (2001) 665.
8. A. Javey, J. Guo, Q. Wang, M. Lundstrom and H. Dai: Nature 424 (2003) 654.
9. T. W. Odom, J. L. Huang, P. Kim and C. M. Lieber: Nature 391 (1998) 62.
10. R. Martel, V. Derycke, C. Lavoie, J. Appenzeller, K. K. Chan, J. Tersoff and Ph. Avouris: Phys. Rev. Lett. 87 (2001) 256805.
11. V. Derycke, R. Martel, J. Appenzeller and Ph. Avouris: Appl. Phys. Lett. 80 (2002) 2773.
12. D. Mann, A. Javey, J. Kong, Q. Wang and H. Dai: Nano Lett. 3 (2003) 1541.
13. T. Kamimura, M. Maeda, K. Sakamoto and K. Matsumoto: Jpn. J. Appl. Phys. 44 (2005) 461.
14. K. Matsumoto, S. Kinoshita, Y. Gotoh, K. Kousuke, T. Kamimura, M. Maeda, K. Sakamoto, M. Kuwahara, N. Atoda and Y. Awano: Jpn. J. Appl. Phys. 42 (2003) 2415.
15. T. Kamimura, K. Yamamoto and K. Matsumoto: Jpn. J. Appl. Phys. 43 (2004) 2771.
16. K. Ishibashi, M. Suzuki, T. Ida and Y. Aoyagi: Appl. Phys. Lett. 79 (2001) 1864.
17. H. W. C. Postma, T. Teepen, Z. Yao, M. Grifoni and C. Dekker: Science 293 (2001) 76.
18. T. Yamada: Phys. Rev. B 69 (2004) 125408.
19. T. Takenobu, T. Takano, M. Shiraishi, Y. Murakami, M. Ata, H. Kataura, Y. Achiba and Y. Iwasa: Nat. Mater. 2 (2003) 683.
20. J. Chen, C. Klinke and A. Afzali and Ph. Avouris: Appl. Phys. Lett. 86 (2005) 123 108.
21. J. Appenzeller, J. Knoch, M. Radosavljevic and Ph. Avouris: Phys. Rev. Lett. 92 (2004) 226802.
22. R. D. Antonov and A. T. Johnson: Phys. Rev. Lett. 83 (1999) 3274.
23. M. Radosavljevic, J. Appenzeller, Ph. Avourisc and J. Knoch: Appl. Phys. Lett. 84 (2004) 3693.
24. K. Yamamoto, T. Kamimura and K. Matsumoto: Jpn. J. Appl. Phys. 44 (2005) 1611.
25. Y. Ohno, K. Inoue, T. Kamimura, K. Maehashi, K. Yamamoto and K. Matsumoto: Jpn. J. Appl. Phys. 44 (2005) 1615.
26. S. M. Sze: Physics of Semiconductor Devices (Wiley, New York, 1981).
27. S. Heinze, J. Tersoff, R. Martel, V. Derycke, J. Appenzeller and Ph. Avouris: Phys. Rev. Lett. 89 (2002) 106801.