Single-electron transistor with ultra-high Coulomb energy of 5000 K using position controlled grown carbon nanotube as channel

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 42, Issue 4 B, 2003, Pages 2415-2418

  Matsumoto, Kazuhiko ^a   Kinoshita, Seizo ^a   Gotoh, Yoshitaka ^a   Kurachi, Kousuke ^a   Kamimura, Takahumi ^a   Maeda, Masatoshi ^a   Sakamoto, Kazue ^a   Kuwahara, Masashi ^a   Atoda, Nobuhumi ^a   Awano, Yuji ^b  

^a JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^b FUJITSU LABORATORIES LTD   (Japan)

Author keywords

Carbon nanotube; Coulomb diamond; Defect; Room temperature; Single electron transistor

Indexed keywords

CATALYSTS; CHEMICAL VAPOR DEPOSITION; DEFECTS; DIAMONDS; ELECTRIC PROPERTIES; GROWTH (MATERIALS); POSITION CONTROL; SEMICONDUCTOR QUANTUM DOTS; THERMAL EFFECTS; TRANSISTORS;

COULOMB ENERGY; ROOM TEMPERATURE COULOMB DIAMOND; SINGLE ELECTRON TRANSISTOR;

CARBON NANOTUBES;

EID: 18344419255     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.2415     Document Type: Article

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