Effects of ultra low energy nitrogen ion irradiation on carbon nanotube channel single-electron transistor

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 43, Issue 5 A, 2004, Pages 2771-2773

  Kamimura, Takafumi ^a,b   Yamamoto, Kazuhiro ^b,c   Matsumoto, Kazuhiko ^b,c,d  

^a UNIVERSITY OF TSUKUBA   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^c NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^d OSAKA UNIVERSITY   (Japan)

Author keywords

Carbon nanotube; Coulomb diamond; Defect; Ion irradiation; Nitrogen ion; Room temperature; Single electron transistor

Indexed keywords

CATALYST ACTIVITY; CRYSTAL DEFECTS; DIAMONDS; ELECTRONS; GATES (TRANSISTOR); ION BOMBARDMENT; NITROGEN; SEMICONDUCTOR QUANTUM DOTS; THERMAL EFFECTS;

COULOMB DIAMOND; ION IRRADIATION; NITROGEN-IONS; ROOM TEMPERATURE; SINGLE ELECTRON TRANSISTORS;

CARBON NANOTUBES;

EID: 3142755001     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.43.2771     Document Type: Article

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