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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 44, Issue 4 A, 2005, Pages 1611-1614

Nitrogen doping of single-walled carbon nanotube by using mass-separated low-energy ion beams

(3) Yamamoto, Kazuhiro a,c Kamimura, Takafumi b,c Matsumoto, Kazuhiko a,b,c

a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST (Japan)

b OSAKA UNIVERSITY (Japan)

c JAPAN SCIENCE AND TECHNOLOGY AGENCY (Japan)

Author keywords

Carbon nanotube; CNT FET; Doping; Ion implantation; Low energy ion beam; SWCNT

Indexed keywords

DOPING (ADDITIVES); ELECTRON ENERGY LOSS SPECTROSCOPY; FIELD EFFECT TRANSISTORS; FULLERENES; ION BEAMS; ION IMPLANTATION; MAGNETIC LENSES; NITROGEN; TRANSMISSION ELECTRON MICROSCOPY; ULTRAHIGH VACUUM;

GAS PHASE REACTIONS; LOW-ENERGY ION BEAMS; MASS ANALYZERS; SINGLE-WALLED CARBON NANOTUBES (SWCNT);

CARBON NANOTUBES;

EID: 21244466363 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/JJAP.44.1611 Document Type: Article

Times cited : (31)

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