Raman scattering of single-walled carbon nanotubes implanted with ultra-low-energy oxygen ions

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 44, Issue 4 A, 2005, Pages 1615-1620

  Ohno, Yasuhide ^a,b   Inoue, Koichi ^a,b   Kamimura, Takafumi ^a,b   Maehashi, Kenzo ^a,b   Yamamoto, Kazuhiro ^b,c   Matsumoto, Kazuhiko ^a,b  

^a OSAKA UNIVERSITY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^c NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

Carbon nanotube; First principle pseudopotential method; Oxygen ion implantation; Raman scattering; Tight binding model; Ultra low energy

Indexed keywords

CHEMICAL VAPOR DEPOSITION; ELECTRONIC STRUCTURE; FIELD EFFECT TRANSISTORS; ION BEAMS; ION IMPLANTATION; PHONONS; RAMAN SCATTERING; RESONANCE;

FIRST PRINCIPLE PSEUDOPOTENTIAL METHODS; FREQUENCY PHONONS; OXYGEN ION IMPLANTATION; TIGHT-BINDING MODELS;

CARBON NANOTUBES;

EID: 21244436392     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.44.1615     Document Type: Article

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