Epitaxial growth of (001)ZrN thin films on (001)Si by low temperature process

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 44, Issue 1 A, 2005, Pages 343-349

  Yanagisawa, Hideto ^a   Shinkai, Satoko ^a   Sasaki, Katsutaka ^a   Abe, Yoshio ^a   Sakai, Akira ^b   Zaima, Shigeaki ^b  

^a KITAMI INSTITUTE OF TECHNOLOGY   (Japan)

^b NAGOYA UNIVERSITY   (Japan)

Author keywords

AFM; Epitaxial growth of ZrN films; Existence of transition layer at the interface; Film density; GIXR; Surface roughness; Tem; X ray pole figure

Indexed keywords

ATOMIC FORCE MICROSCOPY; EPITAXIAL GROWTH; MAGNETRON SPUTTERING; RANDOM ACCESS STORAGE; SILICON; SURFACE ROUGHNESS; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

EPITAXIAL GROWTH OF ZRN FILMS; EXISTENCE OF TRANSITION LAYER AT THE INTERFACE; FILM DENSITY; GIXR; X-RAY POLE FIGURE;

ZIRCONIUM COMPOUNDS;

EID: 15544389819     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.44.343     Document Type: Article

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