A study of nitrogen incorporation during the oxidation of Si(100) in N2O at high temperatures

Journal of the Electrochemical Society

Volumn 143, Issue 1, 1996, Pages 221-228

  Hussey, R J ^a   Hoffman, T L ^a   Tao, Y ^a   Graham, M J ^a  

^a NATIONAL RESEARCH COUNCIL CANADA   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; CHEMICAL BONDS; COMPOSITION; FOURIER TRANSFORM INFRARED SPECTROSCOPY; NITROGEN OXIDES; OXIDATION; REDUCTION; SILICA; SPECTROMETRY; SPUTTERING; X RAY PHOTOELECTRON SPECTROSCOPY;

AUGER ELECTRON SPECTROSCOPY MEASUREMENT; CORE LEVEL SPECTROSCOPY; LOW PRESSURE CHEMICAL VAPOR DEPOSITION; N RICH OXYNITRIDE; RAPID THERMAL OXIDATION METHODS; SECONDARY ION MASS SPECTROSCOPY;

SEMICONDUCTING SILICON;

EID: 0029777783     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1836412     Document Type: Article

References (23)

1. W. Ting, H. Hwang, J. Lee, and D. L. Kwong, Appl. Phys. Lett., 57, 2808 (1990).
2. P. Lange, H. Bernt, E. Hartmannsgruber, and F. Naumann, This Journal, 141, 259 (1994).
3. T. Hori, H. Iwasaki, and K. Tsuji, IEEE Trans. Electron. Devices, ED-36, 340 (1989).
4. N. S. Saks, D. I. Ma, D. M. Fleetwood, and M. E. Twigg, in Silicon Nitride and Silicon Dioxide Thin Insulating Films, V. J. Kapoor and W. D. Brown, Editors, PV 94-16, p. 395, The Electrochemical Society Proceedings Series, Pennington, NJ (1994).
5. J. Ahn, W. Ting, T. Chu, S. N. Lin, and D. L. Kwong, This Journal, 138, L39 (1991).
6. P. J. Tobin, Y. Okada, S. A. Ajuria, V. Lakhotia, W. A. Feil, and R. I. Hegde, J. Appl. Phys., 75, 1811 (1994).
7. Y. Okada, P. J. Tobin, V. Likhotia, W. A. Feil, and R. I. Hegde, Appl. Phys. Lett., 63, 194 (1993).
8. D. Kruger, R. Kurps, and G. Weidner, Semiconductor Sci. Technol., 8, 1706 (1993).
9. G. Weidner and D. Krüger, Appl. Phys. Lett., 62, 294 (1993).
10. Y. Okada, P. J. Tobin, V. Likhotia, W. A. Feil, R. I. Hegde, J. L. Liao, P. P. Rushbrook, and L. J. Arias, Jr., This Journal, 140, L87 (1993).
11. M. Bhat, J. Ahn, D. L. Kwong, M. Arendt, and J. M. White, Appl. Phys. Lett., 64, 1168 (1994).
12. M. Bhat, G. W. Yoon, J. Kim, D. L. Kwong, M. Arendt, and J. M. White, ibid., p. 2116.
13. F. J. Himpsel, H. Akatsu, J. A. Carlisle, L. J. Terminello, E. A. Hudson, J. I. Jia, T. A. Callcott, R. C. Perera, M. G. Samant, J. Stöhr, and D. L. Ederer, in Silicon Nitride and Silicon Dioxide Thin Insulating Films, V. J. Kapoor and W. D. Brown, Editors, PV 94-16, p. 405, The Electrochemical Society Proceedings Series, Pennington, NJ (1994).
14. L. U. T. Ogbuji and D. T. Jayne, This Journal, 140, 759 (1993).
15. R. J. Hussey, G. I. Sproule, D. F. Mitchell, and M. J. Graham, 12th International Corrosion Congress, NACE, Vol. 5B, p. 3831, Houston, TX, Sept. 1993.
16. Practical Surface Analysis, 2nd ed., D. Briggs and M. P. Seah, Editors, Vol. 1, Wiley, New York (1992).
17. W. Ting, H. Hwang, J. Lee, and D. L. Kwong, J. Appl. Phys., 70, 1072 (1991).
18. B. E. Deal and A. S. Grove, ibid., 36, 3770 (1965).
19. U. R. Evans, The Corrosion and Oxidation of Metals, Edward Arnold, London (1960).
20. E. A. Irene, J. Appl. Phys., 54, 5416 (1983).
21. E. A. Irene, This Journal, 125, 1708 (1978).
22. M. L. Green, D. Brasen, K. W. Evans-Lutterodt, L. C. Feldman, K. Krisch, W. Lennard, H.-T. Tang, L. Manchanda, and M.-T. Tang, Appl. Phys. Lett., 65, 848 (1994).
23. H.-J. Schliwinski, U. Schnakenberg, W. Windbracke, H. Neff, and P. Lange, This Journal, 139, 1730 (1992).