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Volumn 88, Issue 4, 2006, Pages 1-3

Atomic force microscopy analysis of cleaved facets in III-nitride laser diodes grown on free-standing GaN substrates

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; GALLIUM NITRIDE; HETEROJUNCTIONS; RELAXATION PROCESSES; SURFACE ROUGHNESS; SURFACE STRUCTURE;

CLEAVED FACETS; CLEAVED SURFACES; WAVEGUIDE LASER DIODES;

SEMICONDUCTOR LASERS;

EID: 31444457130 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.2167400 Document Type: Article

Times cited : (5)

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