Combined atomic force microscopy and scanning tunneling microscopy imaging of cross-sectioned GaN light-emitting diodes

Scanning

Volumn 25, Issue 1, 2003, Pages 45-51

  Bender, J W ^a,b   Salmon, M E ^a   Russell, P E ^a  

^a NORTH CAROLINA STATE UNIVERSITY   (United States)

^b The Department of Mechanical Engineering   (United States)

Author keywords

Atomic force microscopy; Cross section; Gallium nitride; Light emitting diode; Scanning tunneling microscopy

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTAL GROWTH; CRYSTAL STRUCTURE; DOPING (ADDITIVES); GALLIUM NITRIDE; IMAGING SYSTEMS; SCANNING TUNNELING MICROSCOPY;

CRYOGENIC CLEAVING TECHNIQUES;

LIGHT EMITTING DIODES;

GALLIUM; NITROGEN DERIVATIVE;

ARTICLE; ATOMIC FORCE MICROSCOPY; CRYSTAL STRUCTURE; LIGHT EMITTING DIODE; PRIORITY JOURNAL; SAMPLE; SCANNING TUNNELING MICROSCOPY; SURFACE PROPERTY;

EID: 0037287227     PISSN: 01610457     EISSN: None     Source Type: Journal    
DOI: 10.1002/sca.4950250109     Document Type: Article

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