InGaN violet laser diodes grown by molecular beam epitaxy

Physica Status Solidi (A) Applied Research

Volumn 201, Issue 12, 2004, Pages 2668-2671

  Heffernan, J ^a   Kauer, M ^a   Hooper, S E ^a   Bousquet, V ^a   Johnson, K ^a  

^a SHARP LABORATORIES OF EUROPE LTD   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

AMMONIA; ELECTRON CYCLOTRON RESONANCE; EPITAXIAL GROWTH; GALLIUM NITRIDE; MOLECULAR BEAM EPITAXY; OPTOELECTRONIC DEVICES; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING INDIUM COMPOUNDS; CURRENT DENSITY; HETEROJUNCTIONS; RAPID THERMAL ANNEALING;

BLUE-VIOLET LASER DIODES (LD); POST-GROWTH THERMAL ANNEALING; PULSED CURRENT INJECTION; CURRENT INJECTION; DEVICE JUNCTIONS; ELEMENTAL GROUPS; ROOM TEMPERATURE (RT);

SEMICONDUCTOR LASERS; QUANTUM WELL LASERS;

EID: 6344282387     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssa.200405034     Document Type: Conference Paper

References (5)

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